P4KE13C vs P4KE13C feature comparison

P4KE13C International Semiconductor Inc

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P4KE13C Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW IMPEDANCE
Breakdown Voltage-Max 14.3 V 14.3 V
Breakdown Voltage-Min 11.7 V 11.7 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 19 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 10.5 V 10.5 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 9
Rohs Code No
Package Description PLASTIC PACKAGE-2
JEDEC-95 Code DO-41
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED

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Compare P4KE13C with alternatives