P4KE12_B0_00001
vs
P4KE12E3
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
MICROSEMI CORP
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max
13.2 V
13.2 V
Breakdown Voltage-Min
10.8 V
10.8 V
Breakdown Voltage-Nom
12 V
12 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
17.3 V
17.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-41
DO-204AL
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
9.72 V
9.72 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Part Package Code
DO-41
Pin Count
2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
1.13 W
Qualification Status
Not Qualified
Reverse Current-Max
2 µA
Terminal Finish
MATTE TIN
Compare P4KE12_B0_00001 with alternatives
Compare P4KE12E3 with alternatives