P4KE12_B0_00001 vs P4KE12E3 feature comparison

P4KE12_B0_00001 PanJit Semiconductor

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P4KE12E3 Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max 13.2 V 13.2 V
Breakdown Voltage-Min 10.8 V 10.8 V
Breakdown Voltage-Nom 12 V 12 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 17.3 V 17.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 9.72 V 9.72 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Part Package Code DO-41
Pin Count 2
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.13 W
Qualification Status Not Qualified
Reverse Current-Max 2 µA
Terminal Finish MATTE TIN

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