P4KE12TR vs P4KE12-GT3 feature comparison

P4KE12TR World Products Inc

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P4KE12-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer WORLD PRODUCTS INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 13.2 V 13.2 V
Breakdown Voltage-Min 10.8 V 10.8 V
Breakdown Voltage-Nom 12 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 17.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 9.72 V 9.72 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 3 2
Package Description O-PALF-W2
JEDEC-95 Code DO-41
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED

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