P4KE12TR
vs
P4KE12-GT3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
WORLD PRODUCTS INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
13.2 V
13.2 V
Breakdown Voltage-Min
10.8 V
10.8 V
Breakdown Voltage-Nom
12 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
17.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
9.72 V
9.72 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
3
2
Package Description
O-PALF-W2
JEDEC-95 Code
DO-41
Moisture Sensitivity Level
1
Reference Standard
UL RECOGNIZED
Compare P4KE12TR with alternatives
Compare P4KE12-GT3 with alternatives