P4KE12CA vs P4KE12CAHB0G feature comparison

P4KE12CA Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet

P4KE12CAHB0G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 12 V 12 V
Clamping Voltage-Max 16.7 V 16.7 V
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 10.2 V 10.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 54 1
Package Description DO-41, 2 PIN
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 12.6 V
Breakdown Voltage-Min 11.4 V
Case Connection ISOLATED
Configuration SINGLE
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 1 W
Reference Standard AEC-Q101; UL RECOGNIZED
Terminal Finish MATTE TIN

Compare P4KE12CAHB0G with alternatives