P4KE12CA vs MVP4KE12CAE3TR feature comparison

P4KE12CA Galaxy Semi-Conductor Co Ltd

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MVP4KE12CAE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 12 V 12 V
Clamping Voltage-Max 16.7 V 16.7 V
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 10.2 V 10.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 54 1
Part Package Code DO-41
Package Description ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
Pin Count 2
Breakdown Voltage-Max 12.6 V
Breakdown Voltage-Min 11.4 V
Case Connection ISOLATED
Configuration SINGLE
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 1.13 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN

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