P4KE12C vs P4KE12C feature comparison

P4KE12C Kuwait Semiconductor Co Ltd

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P4KE12C MDE Semiconductor Inc

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer FORWARD INTERNATIONAL ELECTRONICS LTD MDE SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 12 V 12 V
Clamping Voltage-Max 17.3 V 16.7 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 9.72 V 10.2 V
Surface Mount NO NO
Base Number Matches 2 5
Rohs Code Yes
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max 13.2 V
Breakdown Voltage-Min 10.8 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 1 W
Reference Standard MIL-STD-750, UL LISTED
Reverse Current-Max 5 µA
Reverse Test Voltage 10.2 V
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED