P4KE12C vs P4KE12C feature comparison

P4KE12C International Semiconductor Inc

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P4KE12C General Instrument Corp

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC GENERAL INSTRUMENT CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW IMPEDANCE
Breakdown Voltage-Max 13.2 V 13.2 V
Breakdown Voltage-Min 10.8 V 10.8 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 17.3 V 17.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA 10 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Breakdown Voltage-Nom 12 V
JEDEC-95 Code DO-204AL

Compare P4KE12C with alternatives

Compare P4KE12C with alternatives