P4KE12A
vs
P4KE12AR1G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
DIGITRON SEMICONDUCTORS
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Max
12.6 V
12.6 V
Breakdown Voltage-Min
11.4 V
11.4 V
Breakdown Voltage-Nom
12 V
12 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
16.7 V
16.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-41
DO-204AL
JESD-30 Code
O-XALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.13 W
1 W
Rep Pk Reverse Voltage-Max
10.2 V
10.2 V
Reverse Current-Max
1 µA
Reverse Test Voltage
10.2 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
57
1
Package Description
O-PALF-W2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Reference Standard
UL RECOGNIZED
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