P4KE110CA
vs
P4KE110C
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
MICROSEMI CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW IMPEDANCE
Breakdown Voltage-Max
116 V
121 V
Breakdown Voltage-Min
105 V
99 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
152 V
158 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
1.13 W
Qualification Status
Not Qualified
Not Qualified
Reverse Current-Max
5 µA
2 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
111
Rohs Code
Part Package Code
DO-41
Package Description
PLASTIC, DO-41, 2 PIN
Pin Count
2
Breakdown Voltage-Nom
110 V
JEDEC-95 Code
DO-204AL
JESD-609 Code
e0
Moisture Sensitivity Level
1
Rep Pk Reverse Voltage-Max
89.2 V
Terminal Finish
TIN LEAD
Compare P4KE110CA with alternatives
Compare P4KE110C with alternatives