P4KE110AHE3/54 vs P4KE110AE3 feature comparison

P4KE110AHE3/54 Vishay Semiconductors

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P4KE110AE3 Microsemi Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS MICROSEMI CORP
Part Package Code DO-41 DO-41
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max 116 V 116 V
Breakdown Voltage-Min 105 V 105 V
Breakdown Voltage-Nom 110.5 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 152 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.5 W 1.13 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 94 V 94 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1

Compare P4KE110AHE3/54 with alternatives

Compare P4KE110AE3 with alternatives