P4KE10CA-B vs P4KE10C-GT3 feature comparison

P4KE10CA-B Rectron Semiconductor

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P4KE10C-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer RECTRON LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY; PRSM-MIN
Breakdown Voltage-Max 10.5 V 11 V
Breakdown Voltage-Min 9.5 V 9 V
Breakdown Voltage-Nom 10 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 14.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard UL CERTIFIED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 8.55 V 8.1 V
Reverse Current-Max 20 µA
Reverse Test Voltage 8.55 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 3 2
Package Description O-PALF-W2
Moisture Sensitivity Level 1
Qualification Status Not Qualified

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