P4KE10A vs P4KE10AR1 feature comparison

P4KE10A Galaxy Microelectronics

Buy Now Datasheet

P4KE10AR1 Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-41
Reach Compliance Code unknown compliant
Breakdown Voltage-Nom 10 V 10 V
Clamping Voltage-Max 14.5 V 14.5 V
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 8.55 V 8.55 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Base Number Matches 1 2
Package Description O-PALF-W2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 10.5 V
Breakdown Voltage-Min 9.5 V
Case Connection ISOLATED
Configuration SINGLE
JEDEC-95 Code DO-204AL
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 1 W
Reference Standard UL RECOGNIZED
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL

Compare P4KE10A with alternatives

Compare P4KE10AR1 with alternatives