P4FL14A_R2_00001 vs SMAJ14AHE2G feature comparison

P4FL14A_R2_00001 PanJit Semiconductor

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SMAJ14AHE2G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-F2 R-PDSO-C2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 17.2 V 17.2 V
Breakdown Voltage-Min 15.6 V 15.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2 AEC-Q101
Rep Pk Reverse Voltage-Max 14 V 14 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 2
Date Of Intro 2016-01-28
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 16.4 V
Clamping Voltage-Max 23.2 V
JEDEC-95 Code DO-214AC
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1 W
Terminal Finish MATTE TIN

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