P4C422-20DC vs VS12G422TDC-4 feature comparison

P4C422-20DC Pyramid Semiconductor Corporation

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VS12G422TDC-4 Microsemi Corporation

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer PYRAMID SEMICONDUCTOR CORP MICROSEMI CORP
Part Package Code DIP
Package Description DIP, DIP, DIP22,.4
Pin Count 22
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8542.32.00.41
Access Time-Max 20 ns 4 ns
JESD-30 Code R-CDIP-T22 R-XDIP-T22
JESD-609 Code e0 e0
Memory Density 1024 bit 1024 bit
Memory IC Type STANDARD SRAM CACHE SRAM
Memory Width 4 4
Number of Functions 1
Number of Terminals 22 22
Number of Words 256 words 256 words
Number of Words Code 256 256
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 256X4 256X4
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 5.715 mm
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS GAAS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Width 10.16 mm
Base Number Matches 1 2
I/O Type SEPARATE
Output Characteristics 3-STATE
Package Equivalence Code DIP22,.4
Power Supplies 5 V
Supply Current-Max 0.3 mA

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