P4C164L-25DM
vs
P4C164L-25DMB
feature comparison
All Stats
Differences Only
Pbfree Code
No
No
Rohs Code
No
No
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PYRAMID SEMICONDUCTOR CORP
PYRAMID SEMICONDUCTOR CORP
Part Package Code
DIP
DIP
Package Description
0.300 INCH, CERAMIC, DIP-28
0.300 INCH, CERAMIC, DIP-28
Pin Count
28
28
Reach Compliance Code
compliant
compliant
ECCN Code
3A001.A.2.C
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
25 ns
25 ns
Additional Feature
LG-MAX
LG-MAX
I/O Type
COMMON
COMMON
JESD-30 Code
R-CDIP-T28
R-CDIP-T28
JESD-609 Code
e0
e0
Length
37.719 mm
37.719 mm
Memory Density
65536 bit
65536 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
28
28
Number of Words
8192 words
8192 words
Number of Words Code
8000
8000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Organization
8KX8
8KX8
Output Characteristics
3-STATE
3-STATE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DIP
Package Equivalence Code
DIP28,.3
DIP28,.3
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
5.715 mm
5.715 mm
Standby Current-Max
0.0002 A
0.0002 A
Standby Voltage-Min
2 V
2 V
Supply Current-Max
0.155 mA
0.155 mA
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
MILITARY
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Width
7.62 mm
7.62 mm
Base Number Matches
1
1
Screening Level
MIL-STD-883 Class B
Compare P4C164L-25DM with alternatives
Compare P4C164L-25DMB with alternatives