We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

P4C164-45P6M vs FT6164L-45DWMB feature comparison

P4C164-45P6M Pyramid Semiconductor Corporation

Buy Now Datasheet

FT6164L-45DWMB Force Technologies Ltd

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Active Active
Ihs Manufacturer PYRAMID SEMICONDUCTOR CORP FORCE TECHNOLOGIES LTD
Part Package Code DIP DIP
Package Description DIP, DIP,
Pin Count 28 28
Reach Compliance Code compliant compliant
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 45 ns 45 ns
JESD-30 Code R-PDIP-T28 R-GDIP-T28
JESD-609 Code e0
Length 36.322 mm 37.846 mm
Memory Density 65536 bit 65536 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 28 28
Number of Words 8192 words 8192 words
Number of Words Code 8000 8000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 8KX8 8KX8
Package Body Material PLASTIC/EPOXY CERAMIC, GLASS-SEALED
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Seated Height-Max 5.08 mm 5.8928 mm
Supply Current-Max 0.145 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Width 15.24 mm 15.24 mm
Base Number Matches 4 2
Additional Feature LG-MAX
Qualification Status Not Qualified
Screening Level MIL-STD-883
Memory » SRAMs
Memory » SRAMs

Compare P4C164-45P6M with alternatives

Compare FT6164L-45DWMB with alternatives