P4C164-25CWMB
vs
5962-3829415MXX
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
PYRAMID SEMICONDUCTOR CORP
|
INTEL CORP
|
Part Package Code |
DIP
|
DIP
|
Package Description |
DIP,
|
CERAMIC, DIP-28
|
Pin Count |
28
|
28
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Access Time-Max |
25 ns
|
25 ns
|
Additional Feature |
LG-MAX
|
|
JESD-30 Code |
R-CDIP-T28
|
R-GDIP-T28
|
Length |
37.846 mm
|
|
Memory Density |
65536 bit
|
65536 bit
|
Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
Memory Width |
8
|
8
|
Number of Functions |
1
|
1
|
Number of Terminals |
28
|
28
|
Number of Words |
8192 words
|
8192 words
|
Number of Words Code |
8000
|
8000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
125 °C
|
125 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Organization |
8KX8
|
8KX8
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, GLASS-SEALED
|
Package Code |
DIP
|
DIP
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Screening Level |
MIL-STD-883 Class B
|
MIL-PRF-38535
|
Seated Height-Max |
5.08 mm
|
|
Supply Current-Max |
0.155 mA
|
|
Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
MILITARY
|
MILITARY
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Pitch |
2.54 mm
|
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Width |
15.24 mm
|
|
Base Number Matches |
1
|
9
|
|
|
|
Compare P4C164-25CWMB with alternatives
Compare 5962-3829415MXX with alternatives