Findchips: Compare P4C164-12CI vs 5962-3829447MZX

P4C164-12CI vs 5962-3829447MZX feature comparison

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Rohs Code	No
Part Life Cycle Code	Active	Active
Ihs Manufacturer	PYRAMID SEMICONDUCTOR CORP	PYRAMID SEMICONDUCTOR CORP
Part Package Code	DIP	DIP
Package Description	DIP,	DIP,
Pin Count	28	28
Reach Compliance Code	compliant	compliant
ECCN Code	EAR99	3A001.A.2.C
HTS Code	8542.32.00.41	8542.32.00.41
Access Time-Max	12 ns	12 ns
Additional Feature	LG-MAX
JESD-30 Code	R-CDIP-T28	R-GDIP-T28
Length	37.719 mm
Memory Density	65536 bit	65536 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM
Memory Width	8	8
Number of Functions	1	1
Number of Terminals	28	28
Number of Words	8192 words	8192 words
Number of Words Code	8000	8000
Operating Mode	ASYNCHRONOUS	ASYNCHRONOUS
Operating Temperature-Max	85 °C	125 °C
Operating Temperature-Min	-40 °C	-55 °C
Organization	8KX8	8KX8
Package Body Material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED
Package Code	DIP	DIP
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Seated Height-Max	5.715 mm
Supply Current-Max	0.18 mA
Supply Voltage-Max (Vsup)	5.5 V	5.5 V
Supply Voltage-Min (Vsup)	4.5 V	4.5 V
Supply Voltage-Nom (Vsup)	5 V	5 V
Surface Mount	NO	NO
Technology	CMOS	CMOS
Temperature Grade	INDUSTRIAL	MILITARY
Terminal Form	THROUGH-HOLE	THROUGH-HOLE
Terminal Pitch	2.54 mm
Terminal Position	DUAL	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Width	7.62 mm
Base Number Matches	1	2
JESD-609 Code		e0
Qualification Status		Not Qualified
Screening Level		MIL-STD-883 Class B (Modified)
Terminal Finish		TIN LEAD
	Memory » SRAMs	Memory » SRAMs