P4C163-25DMB
vs
IDT71569S25TDB
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
PYRAMID SEMICONDUCTOR CORP
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
DIP,
|
DIP,
|
| Pin Count |
28
|
28
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
25 ns
|
25 ns
|
| JESD-30 Code |
R-GDIP-T28
|
R-GDIP-T28
|
| JESD-609 Code |
e0
|
e0
|
| Length |
36.449 mm
|
37.211 mm
|
| Memory Density |
73728 bit
|
73728 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
9
|
9
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
28
|
28
|
| Number of Words |
8192 words
|
8192 words
|
| Number of Words Code |
8000
|
8000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
8KX9
|
8KX9
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.08 mm
|
5.08 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
7.62 mm
|
7.62 mm
|
| Base Number Matches |
1
|
1
|
| Number of Ports |
|
1
|
| Output Characteristics |
|
3-STATE
|
| Output Enable |
|
YES
|
|
|
|
Compare P4C163-25DMB with alternatives
Compare IDT71569S25TDB with alternatives