OM60N10SC
vs
OM60N10SC
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
INFINEON TECHNOLOGIES AG
|
Part Package Code |
TO-258AA
|
|
Package Description |
FLANGE MOUNT, R-MSFM-P3
|
HERMETIC SEALED, METAL, TO-258AA, 3 PIN
|
Pin Count |
3
|
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
720 mJ
|
720 mJ
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
60 A
|
60 A
|
Drain-source On Resistance-Max |
0.025 Ω
|
0.025 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-258AA
|
TO-258AA
|
JESD-30 Code |
R-MSFM-P3
|
R-MSFM-P3
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
130 W
|
|
Pulsed Drain Current-Max (IDM) |
180 A
|
180 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
PIN/PEG
|
PIN/PEG
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
4
|
|
|
|
Compare OM60N10SC with alternatives
Compare OM60N10SC with alternatives