NVTFS5116PLTAG
vs
NVTFS5116PLWFTAG
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ONSEMI
|
ONSEMI
|
| Part Package Code |
WDFN8 3.3x3.3, 0.65P
|
WDFN8 3.3x3.3, 0.65P
|
| Package Description |
WDFN-8
|
|
| Pin Count |
8
|
8
|
| Manufacturer Package Code |
511AB
|
515AN
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
18 Weeks
|
18 Weeks
|
| Samacsys Manufacturer |
onsemi
|
onsemi
|
| Avalanche Energy Rating (Eas) |
45 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
6 A
|
14 A
|
| Drain-source On Resistance-Max |
0.072 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PDSO-F5
|
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
5
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
SQUARE
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
3.2 W
|
21 W
|
| Pulsed Drain Current-Max (IDM) |
126 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
FLAT
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare NVTFS5116PLTAG with alternatives
Compare NVTFS5116PLWFTAG with alternatives