NVMFS5C612NLWFT3G
vs
NVMFS5C612NLAFT1G
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
| Package Description |
,
|
SO-8FL, DFN5, 6 PIN
|
| Manufacturer Package Code |
507BE
|
488AA
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
onsemi
|
onsemi
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
235 A
|
250 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
167 W
|
167 W
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
Matte Tin (Sn) - annealed
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
29 Weeks
|
| Date Of Intro |
|
2017-02-24
|
| Avalanche Energy Rating (Eas) |
|
451 mJ
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
60 V
|
| Drain-source On Resistance-Max |
|
0.0023 Ω
|
| Feedback Cap-Max (Crss) |
|
45 pF
|
| JESD-30 Code |
|
R-PDSO-F5
|
| Number of Terminals |
|
5
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Pulsed Drain Current-Max (IDM) |
|
900 A
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Form |
|
FLAT
|
| Terminal Position |
|
DUAL
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare NVMFS5C612NLWFT3G with alternatives
Compare NVMFS5C612NLAFT1G with alternatives