NVMFS5C430NT3G
vs
NVMFS5C430NT1G
feature comparison
Pbfree Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
End Of Life
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
Package Description |
SMALL OUTLINE, R-PDSO-F5
|
|
Manufacturer Package Code |
488AA
|
488AA
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
onsemi
|
onsemi
|
Avalanche Energy Rating (Eas) |
338 mJ
|
338 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
40 V
|
40 V
|
Drain Current-Max (ID) |
185 A
|
185 A
|
Drain-source On Resistance-Max |
0.0017 Ω
|
0.0017 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
45 pF
|
45 pF
|
JESD-30 Code |
R-PDSO-F6
|
R-PDSO-F6
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
6
|
6
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
106 W
|
106 W
|
Pulsed Drain Current-Max (IDM) |
900 A
|
900 A
|
Reference Standard |
AEC-Q101
|
AEC-Q101
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
Matte Tin (Sn) - annealed
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Factory Lead Time |
|
2 Days
|
|
|
|
Compare NVMFS5C430NT3G with alternatives
Compare NVMFS5C430NT1G with alternatives