NVHL082N65S3HF vs IPB60R099C6ATMA1 feature comparison

NVHL082N65S3HF onsemi

Buy Now Datasheet

IPB60R099C6ATMA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes No
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer ONSEMI INFINEON TECHNOLOGIES AG
Part Package Code TO-247-3LD D2PAK
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 19 Weeks 15 Weeks
Samacsys Manufacturer onsemi Infineon
Avalanche Energy Rating (Eas) 510 mJ 796 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V 600 V
Drain Current-Max (ID) 40 A 37.9 A
Drain-source On Resistance-Max 0.082 Ω 0.099 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 313 W
Pulsed Drain Current-Max (IDM) 100 A 112 A
Reference Standard AEC-Q101
Surface Mount NO YES
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Moisture Sensitivity Level 1
Qualification Status Not Qualified

Compare NVHL082N65S3HF with alternatives

Compare IPB60R099C6ATMA1 with alternatives