NVHL082N65S3HF
vs
IPB60R099C6ATMA1
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
No
Part Life Cycle Code
Active
Not Recommended
Ihs Manufacturer
ONSEMI
INFINEON TECHNOLOGIES AG
Part Package Code
TO-247-3LD
D2PAK
Manufacturer Package Code
340CX
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
19 Weeks
15 Weeks
Samacsys Manufacturer
onsemi
Infineon
Avalanche Energy Rating (Eas)
510 mJ
796 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
600 V
Drain Current-Max (ID)
40 A
37.9 A
Drain-source On Resistance-Max
0.082 Ω
0.099 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
313 W
Pulsed Drain Current-Max (IDM)
100 A
112 A
Reference Standard
AEC-Q101
Surface Mount
NO
YES
Terminal Finish
MATTE TIN
Tin (Sn)
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Yes
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Compare NVHL082N65S3HF with alternatives
Compare IPB60R099C6ATMA1 with alternatives