NVB6413ANT4G vs NTB6413ANG feature comparison

NVB6413ANT4G onsemi

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NTB6413ANG onsemi

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Yes Yes
Obsolete Obsolete
ONSEMI ONSEMI
D2PAK 2 LEAD D2PAK 2 LEAD
D2PAK-3/2 D2PAK-3
3 3
418B-04 418B-04
not_compliant not_compliant
EAR99 EAR99
4 Weeks
onsemi onsemi
200 mJ 200 mJ
DRAIN DRAIN
SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
100 V 100 V
42 A 42 A
0.028 Ω 0.028 Ω
METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2 R-PSSO-G2
e3 e3
1 1
1 1
2 2
ENHANCEMENT MODE ENHANCEMENT MODE
175 °C 175 °C
PLASTIC/EPOXY PLASTIC/EPOXY
RECTANGULAR RECTANGULAR
SMALL OUTLINE SMALL OUTLINE
NOT SPECIFIED 260
N-CHANNEL N-CHANNEL
136 W 136 W
178 A 178 A
AEC-Q101
YES YES
Tin (Sn) Tin (Sn)
GULL WING GULL WING
SINGLE SINGLE
NOT SPECIFIED 30
SILICON SILICON
1 1
Not Qualified

Compare NVB6413ANT4G with alternatives

Compare NTB6413ANG with alternatives