NTMFS4935NT3G
vs
IRF7862PBF
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Part Life Cycle Code |
End Of Life
|
Transferred
|
| Ihs Manufacturer |
ONSEMI
|
INTERNATIONAL RECTIFIER CORP
|
| Part Package Code |
DFN5 5X6, 1.27P (SO 8FL)
|
SOIC
|
| Pin Count |
5
|
8
|
| Manufacturer Package Code |
488AA
|
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
onsemi
|
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
Yes
|
| Package Description |
|
LEADFREE, SO-8
|
| Avalanche Energy Rating (Eas) |
|
350 mJ
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Drain Current-Max (ID) |
|
21 A
|
| Drain-source On Resistance-Max |
|
0.0037 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
|
MS-012AA
|
| JESD-30 Code |
|
R-PDSO-G8
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
8
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
2.5 W
|
| Pulsed Drain Current-Max (IDM) |
|
170 A
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare NTMFS4935NT3G with alternatives
Compare IRF7862PBF with alternatives