NTMD6N02R2 vs FDS6892AZ feature comparison

NTMD6N02R2 Rochester Electronics LLC

Buy Now Datasheet

FDS6892AZ Rochester Electronics LLC

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ROCHESTER ELECTRONICS LLC
Part Package Code SOT SOT
Package Description CASE 751-07, SO-8 SO-8
Pin Count 8 8
Manufacturer Package Code CASE 751-07
Reach Compliance Code unknown unknown
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 360 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 3.92 A 7.5 A
Drain-source On Resistance-Max 0.035 Ω 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0 e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A 30 A
Qualification Status COMMERCIAL COMMERCIAL
Surface Mount YES YES
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2

Compare NTMD6N02R2 with alternatives

Compare FDS6892AZ with alternatives