NTMD4N03R2
vs
NTMD4N03R2G
feature comparison
Pbfree Code |
No
|
Yes
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
Part Package Code |
SOT
|
SOIC-8 Narrow Body
|
Package Description |
MINIATURE, CASE 751-07, SOIC-8
|
SOIC-8
|
Pin Count |
8
|
8
|
Manufacturer Package Code |
CASE 751-07
|
751-07
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
4 Weeks
|
4 Weeks
|
Samacsys Manufacturer |
onsemi
|
onsemi
|
Avalanche Energy Rating (Eas) |
80 mJ
|
80 mJ
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
4 A
|
4 A
|
Drain-source On Resistance-Max |
0.06 Ω
|
0.06 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e0
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
235
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
2 W
|
2 W
|
Pulsed Drain Current-Max (IDM) |
12 A
|
12 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
MATTE TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare NTMD4N03R2 with alternatives
Compare NTMD4N03R2G with alternatives