NTGS1135PT1G
vs
SI6926ADQ-T1-GE3
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
End Of Life
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
VISHAY SILICONIX
|
| Part Package Code |
TSOP
|
TSSOP
|
| Package Description |
LEAD FREE, CASE 318G-02, TSOP-6
|
SMALL OUTLINE, R-PDSO-G8
|
| Pin Count |
6
|
8
|
| Manufacturer Package Code |
CASE 318G-02
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G8
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
NOT SPECIFIED
|
1
|
| Number of Terminals |
6
|
8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
40
|
| Base Number Matches |
1
|
1
|
| ECCN Code |
|
EAR99
|
| Samacsys Manufacturer |
|
Vishay
|
| Configuration |
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
20 V
|
| Drain Current-Max (ID) |
|
4.1 A
|
| Drain-source On Resistance-Max |
|
0.03 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
|
2
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
1 W
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare NTGS1135PT1G with alternatives
Compare SI6926ADQ-T1-GE3 with alternatives