NTE5817 vs 6A10G feature comparison

NTE5817 NTE Electronics Inc

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6A10G Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer NTE ELECTRONICS INC GALAXY SEMI-CONDUCTOR CO LTD
Package Description O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer NTE ELECTRONICS
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V 1 V
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 400 A 250 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 6 A 6 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 19
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Reverse Current-Max 10 µA
Reverse Test Voltage 1000 V

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