NTE475
vs
2N5945
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NTE ELECTRONICS INC
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Package Description |
POST/STUD MOUNT, O-MUPM-D3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Case Connection |
EMITTER
|
|
| Collector Current-Max (IC) |
1.5 A
|
2 A
|
| Collector-Base Capacitance-Max |
20 pF
|
|
| Collector-Emitter Voltage-Max |
18 V
|
16 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Highest Frequency Band |
VERY HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
O-MUPM-D3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
POST/STUD MOUNT
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
11.5 W
|
|
| Power Dissipation-Max (Abs) |
11 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
|
| Terminal Form |
SOLDER LUG
|
|
| Terminal Position |
UPPER
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
350 MHz
|
|
| Base Number Matches |
1
|
6
|
| DC Current Gain-Min (hFE) |
|
20
|
|
|
|
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