NTD80N02T4
vs
NTD4857N-35G
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Yes
Rohs Code
No
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
ON SEMICONDUCTOR
Package Description
CASE 369AA-01, DPAK-3
LEAD FREE, CASE 369AC-01, 3 IPAK-3
Pin Count
3
3
Manufacturer Package Code
CASE 369AA-01
369AD
Reach Compliance Code
unknown
not_compliant
Avalanche Energy Rating (Eas)
733 mJ
144.5 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
24 V
25 V
Drain Current-Max (ID)
80 A
12 A
Drain-source On Resistance-Max
0.0058 Ω
0.008 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSIP-T3
JESD-609 Code
e0
e3
Moisture Sensitivity Level
NOT SPECIFIED
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Peak Reflow Temperature (Cel)
240
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
200 A
156 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
NO
Terminal Finish
TIN LEAD
TIN
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Part Package Code
3.5 mm IPAK, Straight Lead
ECCN Code
EAR99
Samacsys Manufacturer
onsemi
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
56.6 W
Compare NTD80N02T4 with alternatives
Compare NTD4857N-35G with alternatives