NTD80N02T4 vs NTD4857N-35G feature comparison

NTD80N02T4 Rochester Electronics LLC

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NTD4857N-35G onsemi

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Pbfree Code Yes Yes
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ON SEMICONDUCTOR
Package Description CASE 369AA-01, DPAK-3 LEAD FREE, CASE 369AC-01, 3 IPAK-3
Pin Count 3 3
Manufacturer Package Code CASE 369AA-01 369AD
Reach Compliance Code unknown not_compliant
Avalanche Energy Rating (Eas) 733 mJ 144.5 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 24 V 25 V
Drain Current-Max (ID) 80 A 12 A
Drain-source On Resistance-Max 0.0058 Ω 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e0 e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 240 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A 156 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES NO
Terminal Finish TIN LEAD TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Part Package Code 3.5 mm IPAK, Straight Lead
ECCN Code EAR99
Samacsys Manufacturer onsemi
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 56.6 W

Compare NTD80N02T4 with alternatives

Compare NTD4857N-35G with alternatives