NTD60N02R-1
vs
NTD4913N-35G
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
ON SEMICONDUCTOR
|
Package Description |
CASE 369D-01, DPAK-3
|
IN-LINE, R-PSIP-T3
|
Pin Count |
3
|
3
|
Manufacturer Package Code |
CASE 369D-01
|
369AD
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Samacsys Manufacturer |
onsemi
|
onsemi
|
Avalanche Energy Rating (Eas) |
60 mJ
|
22 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
25 V
|
30 V
|
Drain Current-Max (ID) |
32 A
|
7.7 A
|
Drain-source On Resistance-Max |
0.0105 Ω
|
0.015 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
48 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
3.5 mm IPAK, Straight Lead
|
Moisture Sensitivity Level |
|
1
|
Pulsed Drain Current-Max (IDM) |
|
132 A
|
|
|
|
Compare NTD60N02R-1 with alternatives
Compare NTD4913N-35G with alternatives