NTD4906N-1G vs NTD4906N-1H feature comparison

NTD4906N-1G onsemi

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NTD4906N-1H onsemi

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Yes
Obsolete Obsolete
ONSEMI ON SEMICONDUCTOR
DPAK INSERTION MOUNT
IPAK-3 CASE 369D-01, IPAK-3
4 3
369 CASE 369D-01
not_compliant unknown
EAR99 EAR99
4 Weeks
onsemi
48 mJ 48 mJ
DRAIN DRAIN
SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
30 V 30 V
14 A 14 A
0.008 Ω 0.008 Ω
METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
R-PSIP-T3 R-PSIP-T3
e3
1
1 1
3 3
ENHANCEMENT MODE ENHANCEMENT MODE
175 °C 175 °C
PLASTIC/EPOXY PLASTIC/EPOXY
RECTANGULAR RECTANGULAR
IN-LINE IN-LINE
N-CHANNEL N-CHANNEL
37.5 W 37.5 W
223 A 223 A
Not Qualified Not Qualified
NO NO
TIN
THROUGH-HOLE THROUGH-HOLE
SINGLE SINGLE
SWITCHING SWITCHING
SILICON SILICON
2 1
Yes

Compare NTD4906N-1G with alternatives

Compare NTD4906N-1H with alternatives