NTD4810N-35G
vs
NVD4806NT4G
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
ONSEMI
|
| Part Package Code |
3.5 mm IPAK, Straight Lead
|
DPAK 4 LEAD Single Gauge Surface Mount
|
| Package Description |
LEAD FREE, CASE 369AC-01, 3 IPAK-3
|
|
| Pin Count |
3
|
4
|
| Manufacturer Package Code |
369AD
|
369AA
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
2 Days
|
| Samacsys Manufacturer |
onsemi
|
onsemi
|
| Avalanche Energy Rating (Eas) |
98 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
30 V
|
|
| Drain Current-Max (ID) |
8.6 A
|
79 A
|
| Drain-source On Resistance-Max |
0.0157 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSIP-T3
|
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
120 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN
|
Tin (Sn)
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation-Max (Abs) |
|
68 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare NTD4810N-35G with alternatives
Compare NVD4806NT4G with alternatives