NTD4809NHT1G
vs
NTD4906NT4H
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
Package Description |
IN-LINE, R-PSIP-T3
|
DPAK-3
|
Pin Count |
3
|
3
|
Manufacturer Package Code |
CASE 369D-01
|
CASE 369AA-01
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
112.5 mJ
|
48 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
9 A
|
14 A
|
Drain-source On Resistance-Max |
0.0125 Ω
|
0.008 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
130 A
|
223 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
MATTE TIN
|
TIN
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Factory Lead Time |
|
4 Weeks
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation-Max (Abs) |
|
37.5 W
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare NTD4809NHT1G with alternatives
Compare NTD4906NT4H with alternatives