NTD110N02R-001G
vs
NTD110N02RT4G
feature comparison
Pbfree Code |
No
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
ROCHESTER ELECTRONICS LLC
|
Package Description |
LEAD FREE, CASE 369D-01, DPAK-3
|
LEAD FREE, CASE 369AA-01, DPAK-3
|
Pin Count |
3
|
3
|
Manufacturer Package Code |
CASE 369D-01
|
CASE 369AA-01
|
Reach Compliance Code |
unknown
|
unknown
|
Avalanche Energy Rating (Eas) |
120 mJ
|
120 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
24 V
|
24 V
|
Drain Current-Max (ID) |
12.5 A
|
12.5 A
|
Drain-source On Resistance-Max |
0.0062 Ω
|
0.0062 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
NOT SPECIFIED
|
NOT SPECIFIED
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
110 A
|
110 A
|
Qualification Status |
COMMERCIAL
|
COMMERCIAL
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
MATTE TIN
|
NOT SPECIFIED
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
|
|
|
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