NTB45N06G
vs
MTB30N06VL
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
ON SEMICONDUCTOR
MOTOROLA INC
Part Package Code
D2PAK 2 LEAD
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Manufacturer Package Code
418B-04
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Samacsys Manufacturer
onsemi
Avalanche Energy Rating (Eas)
240 mJ
154 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
45 A
30 A
Drain-source On Resistance-Max
0.026 Ω
0.05 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
90 W
Pulsed Drain Current-Max (IDM)
150 A
105 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
4
Rohs Code
Additional Feature
AVALANCHE RATED
Feedback Cap-Max (Crss)
190 pF
Power Dissipation Ambient-Max
90 W
Turn-off Time-Max (toff)
330 ns
Turn-on Time-Max (ton)
550 ns
Compare NTB45N06G with alternatives