NTB45N06 vs MTB30N06VLT4 feature comparison

NTB45N06 onsemi

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MTB30N06VLT4 Freescale Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ONSEMI MOTOROLA SEMICONDUCTOR PRODUCTS
Package Description D2PAK-3 ,
Pin Count 3
Manufacturer Package Code CASE 418B-04
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 240 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE Single
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 90 W
Pulsed Drain Current-Max (IDM) 150 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn80Pb20)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 1 4
Drain Current-Max (Abs) (ID) 30 A

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