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NT5DS32M16BF-6K vs H5DU5162EFR-E3J feature comparison

NT5DS32M16BF-6K Nanya Technology Corporation

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H5DU5162EFR-E3J SK Hynix Inc

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NANYA TECHNOLOGY CORP SK HYNIX INC
Part Package Code BGA BGA
Package Description TBGA, BGA60,9X12,40/32 VBGA, BGA60,9X12,40/32
Pin Count 60 60
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.7 ns 0.7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz 200 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 2,4,8 2,4,8
JESD-30 Code R-PBGA-B60 R-PBGA-B60
JESD-609 Code e0 e1
Length 12 mm 12 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR1 DRAM DDR1 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 60 60
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Organization 32MX16 32MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TBGA VBGA
Package Equivalence Code BGA60,9X12,40/32 BGA60,9X12,40/32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE GRID ARRAY, VERY THIN PROFILE
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1 mm
Self Refresh YES YES
Sequential Burst Length 2,4,8 2,4,8
Standby Current-Max 0.003 A 0.005 A
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Finish TIN LEAD Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Width 10 mm 8 mm
Base Number Matches 1 1
Peak Reflow Temperature (Cel) 260
Supply Current-Max 0.26 mA
Time@Peak Reflow Temperature-Max (s) 20
Memory » DRAMs
Memory » DRAMs

Compare NT5DS32M16BF-6K with alternatives

Compare H5DU5162EFR-E3J with alternatives