NT1GD64S8HB0FM-6K vs M470L2923BN0-LCC feature comparison

NT1GD64S8HB0FM-6K Nanya Technology Corporation

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M470L2923BN0-LCC Samsung Semiconductor

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NANYA TECHNOLOGY CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code MODULE SODIMM
Package Description DIMM, DIMM200,24 DIMM, DIMM200,24
Pin Count 200 200
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 0.75 ns 0.65 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz 200 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N200 R-XZMA-N200
JESD-609 Code e4 e0
Memory Density 8589934592 bit 8589934592 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 200 200
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 128MX64 128MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM200,24 DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Self Refresh YES YES
Standby Current-Max 0.057 A 0.08 A
Supply Current-Max 4.961 mA 4.2 mA
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.5 V
Supply Voltage-Nom (Vsup) 2.5 V 2.6 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish GOLD TIN LEAD
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm 0.6 mm
Terminal Position DUAL ZIG-ZAG
Base Number Matches 1 1

Compare NT1GD64S8HB0FM-6K with alternatives

Compare M470L2923BN0-LCC with alternatives