NS8GT
vs
EGP8GT-XX-TU
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
EIC SEMICONDUCTOR CO LTD
TAITRON COMPONENTS INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
HIGH RELIABILITY
LOW LEAKAGE CURRENT
Application
GENERAL PURPOSE
EFFICIENCY
Case Connection
CATHODE
CATHODE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.3 V
JEDEC-95 Code
TO-220AC
TO-220AC
JESD-30 Code
R-PSFM-T2
R-PSFM-T2
Non-rep Pk Forward Current-Max
125 A
125 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-50 °C
Output Current-Max
8 A
8 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Current-Max
10 µA
5 µA
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
1
1
Reverse Recovery Time-Max
0.035 µs
Reverse Test Voltage
400 V
Compare NS8GT with alternatives
Compare EGP8GT-XX-TU with alternatives