NRVHP8H20MFDT3G
vs
NRVHP8H200MFDWFT1G
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
| Package Description |
SO-8FL, DFN8, 8 PIN
|
SO8FL, DFN8, 8 PIN
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
FREE WHEELING DIODE
|
FREE WHEELING DIODE
|
| Application |
ULTRA FAST RECOVERY POWER
|
GENERAL PURPOSE
|
| Case Connection |
CATHODE
|
CATHODE
|
| Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.09 V
|
0.91 V
|
| JESD-30 Code |
R-PDSO-F8
|
R-PDSO-F6
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Pk Forward Current-Max |
80 A
|
80 A
|
| Number of Elements |
2
|
2
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
8
|
6
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
4 A
|
4 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Reference Standard |
AEC-Q101
|
AEC-Q101
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Current-Max |
0.5 µA
|
0.5 µA
|
| Reverse Recovery Time-Max |
0.028 µs
|
0.03 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
30
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Manufacturer Package Code |
|
506BT
|
| Factory Lead Time |
|
2 Days
|
| Samacsys Manufacturer |
|
onsemi
|
|
|
|
Compare NRVHP8H20MFDT3G with alternatives
Compare NRVHP8H200MFDWFT1G with alternatives