NP80N06PLG-E1B-AY
vs
IPB080N06NG
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Not Recommended
Obsolete
Ihs Manufacturer
RENESAS ELECTRONICS CORP
INFINEON TECHNOLOGIES AG
Part Package Code
MP-25ZP
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
4
Manufacturer Package Code
PRSS0004AL
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Renesas Electronics
Additional Feature
LOGIC LEVEL COMPATIBLE
AVALANCHE RATED
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
80 A
80 A
Drain-source On Resistance-Max
0.0083 Ω
0.0077 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
245
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
115 W
214 W
Pulsed Drain Current-Max (IDM)
180 A
320 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Avalanche Energy Rating (Eas)
448 mJ
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
MATTE TIN
Compare NP80N06PLG-E1B-AY with alternatives
Compare IPB080N06NG with alternatives