NM25C04N
vs
NM25C04EN
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
NATIONAL SEMICONDUCTOR CORP
Package Description
DIP, DIP8,.3
DIP, DIP8,.3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.51
8542.32.00.51
Additional Feature
HARDWARE & SOFTWARE WRITE PROTECTION; DATA RETENTION > 40 YEARS
HARDWARE & SOFTWARE WRITE PROTECTION; DATA RETENTION > 40 YEARS
Clock Frequency-Max (fCLK)
2.1 MHz
1 MHz
Data Retention Time-Min
100
100
Endurance
1000000 Write/Erase Cycles
1000000 Write/Erase Cycles
JESD-30 Code
R-PDIP-T8
R-PDIP-T8
JESD-609 Code
e0
e0
Length
9.817 mm
9.817 mm
Memory Density
4096 bit
4096 bit
Memory IC Type
EEPROM
EEPROM
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
8
8
Number of Words
512 words
512 words
Number of Words Code
512
512
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
70 °C
85 °C
Operating Temperature-Min
-40 °C
Organization
512X8
512X8
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
DIP
DIP
Package Equivalence Code
DIP8,.3
DIP8,.3
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
SERIAL
SERIAL
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
5.08 mm
5.08 mm
Serial Bus Type
SPI
SPI
Standby Current-Max
0.00015 A
0.00015 A
Supply Current-Max
0.003 mA
0.003 mA
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
INDUSTRIAL
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Width
7.62 mm
7.62 mm
Write Cycle Time-Max (tWC)
5 ms
5 ms
Write Protection
HARDWARE/SOFTWARE
HARDWARE/SOFTWARE
Base Number Matches
2
2
Pbfree Code
Part Package Code
DIP
Pin Count
8
Compare NM25C04N with alternatives
Compare NM25C04EN with alternatives