NE85639R-T1
vs
2SC1730
feature comparison
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
CALIFORNIA EASTERN LABORATORIES
|
MICRO ELECTRONICS LTD
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
CYLINDRICAL, O-PBCY-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.05 A
|
| Collector-Base Capacitance-Max |
0.9 pF
|
1.5 pF
|
| Collector-Emitter Voltage-Max |
12 V
|
15 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
50
|
60
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
|
| JESD-30 Code |
R-PDSO-G4
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
3
|
| Operating Temperature-Max |
150 °C
|
125 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
0.2 W
|
0.3 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
9000 MHz
|
800 MHz
|
| Base Number Matches |
4
|
5
|
| JEDEC-95 Code |
|
TO-92
|
| Power Dissipation-Max (Abs) |
|
0.25 W
|
|
|
|
Compare NE85639R-T1 with alternatives
Compare 2SC1730 with alternatives