NE85633-T1B-A vs NE85633-T1B-A feature comparison

NE85633-T1B-A California Eastern Laboratories (CEL)

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NE85633-T1B-A NEC Electronics Group

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer CALIFORNIA EASTERN LABORATORIES NEC ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 1 pF 1 pF
Collector-Emitter Voltage-Max 12 V 12 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 50
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 7000 MHz 7000 MHz
Base Number Matches 1 1
Additional Feature LOW NOISE
JESD-609 Code e6
Terminal Finish TIN BISMUTH

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Compare NE85633-T1B-A with alternatives