NE76118-K
vs
NE425S01-T1
feature comparison
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
NEC ELECTRONICS CORP
|
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
|
Package Description |
SMALL OUTLINE, R-PDSO-G4
|
|
Pin Count |
4
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW NOISE
|
LOW NOISE
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
4 V
|
3 V
|
Drain Current-Max (ID) |
0.02 A
|
0.02 A
|
FET Technology |
METAL SEMICONDUCTOR
|
HETERO-JUNCTION
|
Highest Frequency Band |
S BAND
|
KU BAND
|
JESD-30 Code |
R-PDSO-G4
|
X-PXMW-G4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
UNSPECIFIED
|
Package Style |
SMALL OUTLINE
|
MICROWAVE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Gain-Min (Gp) |
9.5 dB
|
10.5 dB
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
UNSPECIFIED
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
Base Number Matches |
1
|
2
|
|
|
|
Compare NE76118-K with alternatives
Compare NE425S01-T1 with alternatives