NE722S01
vs
FHX14LG
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
|
FUJITSU LTD
|
| Package Description |
S01, 4 PIN
|
DISK BUTTON, O-CRDB-F4
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW NOISE
|
HIGH RELIABILITY
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
4 V
|
3.5 V
|
| Drain Current-Max (ID) |
0.04 A
|
|
| FET Technology |
METAL SEMICONDUCTOR
|
HIGH ELECTRON MOBILITY
|
| Highest Frequency Band |
X BAND
|
KU BAND
|
| JESD-30 Code |
X-PXMW-G4
|
O-CRDB-F4
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
UNSPECIFIED
|
ROUND
|
| Package Style |
MICROWAVE
|
DISK BUTTON
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
GULL WING
|
FLAT
|
| Terminal Position |
UNSPECIFIED
|
RADIAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
| Base Number Matches |
6
|
2
|
| Pin Count |
|
4
|
| HTS Code |
|
8541.21.00.95
|
| Case Connection |
|
SOURCE
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation Ambient-Max |
|
0.18 W
|
| Power Gain-Min (Gp) |
|
11 dB
|
|
|
|
Compare NE722S01 with alternatives
Compare FHX14LG with alternatives