NE71000
vs
NE71083
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
CALIFORNIA EASTERN LABORATORIES
|
CALIFORNIA EASTERN LABORATORIES
|
Package Description |
UNCASED CHIP, R-XUUC-N5
|
DISK BUTTON, O-CRDB-F4
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW NOISE
|
LOW NOISE
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
5 V
|
5 V
|
Drain Current-Max (ID) |
0.12 A
|
0.12 A
|
FET Technology |
METAL SEMICONDUCTOR
|
METAL SEMICONDUCTOR
|
Highest Frequency Band |
K BAND
|
K BAND
|
JESD-30 Code |
R-XUUC-N5
|
O-CRDB-F4
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
4
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
UNSPECIFIED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
UNCASED CHIP
|
DISK BUTTON
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Gain-Min (Gp) |
8 dB
|
8 dB
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
FLAT
|
Terminal Position |
UPPER
|
RADIAL
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
Base Number Matches |
4
|
1
|
|
|
|
Compare NE71000 with alternatives
Compare NE71083 with alternatives